IPI147N12N3GAKSA1
Infineon Technologies
型号:
IPI147N12N3GAKSA1
封装:
PG-TO262-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 120V 56A TO262-3
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Discontinued at Digi-Key |
| Vgs(th) (Max) @ Id | 4V @ 61µA |
| Base Product Number | IPI147 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 56A, 10V |
| Power Dissipation (Max) | 107W (Tc) |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
2000+日均询价数量
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15,000 ㎡库存仓库
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