IPI126N10N3GXKSA1

Infineon Technologies

型号:

IPI126N10N3GXKSA1

品牌:

封装:

PG-TO262-3

批次:

数据手册:

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 10500

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Infineon Technologies
Series	OptiMOS™ 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 46µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	12.6mOhm @ 46A, 10V
Power Dissipation (Max)	94W (Tc)
Supplier Device Package	PG-TO262-3
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)