IPI076N12N3GAKSA1
Infineon Technologies
型号:
IPI076N12N3GAKSA1
封装:
PG-TO262-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 120V 100A TO262-3
购买数量:
库存 : 500
最小起订量: 1 最小递增量: 1
数量
单价
1
3.116
10
2.80155
100
2.29577
500
1.954321
1000
1.648231
2000
1.565818
5000
1.506956
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 130µA |
| Base Product Number | IPI076 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 7.6mOhm @ 100A, 10V |
| Power Dissipation (Max) | 188W (Tc) |
| Supplier Device Package | PG-TO262-3 |
| Gate Charge (Qg) (Max) @ Vgs | 101 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 120 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6640 pF @ 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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