IPI072N10N3 G

Infineon Technologies

型号:

IPI072N10N3 G

品牌:

封装:

PG-TO262-3-1

批次:

数据手册:

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 1000

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Infineon Technologies
Series	OptiMOS® 3
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 90µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	7.2mOhm @ 80A, 10V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	PG-TO262-3-1
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	4910 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)