IPG20N06S2L65ATMA1
Infineon Technologies
型号:
IPG20N06S2L65ATMA1
封装:
PG-TDSON-8-4
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 55V 20A TDSON-8-4
购买数量:
库存 : 37105
最小起订量: 1 最小递增量: 1
数量
单价
1
0.8835
10
0.79135
100
0.617025
500
0.509732
1000
0.40241
2000
0.375592
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 43W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Supplier Device Package | PG-TDSON-8-4 |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
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