IPG20N06S2L65AAUMA1
Infineon Technologies
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS® |
| Package | Bulk |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 43W (Tc) |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Product Status | Obsolete |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Supplier Device Package | PG-TDSON-8-10 |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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