IPG20N06S2L35AATMA1
Infineon Technologies
型号:
IPG20N06S2L35AATMA1
封装:
PG-TDSON-8-10
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 55V 2A 8TDSON
购买数量:
库存 : 4760
最小起订量: 1 最小递增量: 1
数量
单价
1
1.1685
10
1.0469
100
0.81605
500
0.674158
1000
0.532238
2000
0.496755
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 65W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2V @ 27µA |
| Base Product Number | IPG20N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 15A, 10V |
| Supplier Device Package | PG-TDSON-8-10 |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Drain to Source Voltage (Vdss) | 55V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
2000+日均询价数量
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