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IPG20N04S4L18AATMA1

Infineon Technologies

型号:

IPG20N04S4L18AATMA1

封装:

PG-TDSON-8-10

批次:

-

数据手册:

-

描述:

MOSFET_(20V 40V) PG-TDSON-8

购买数量:

库存 : 4851

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.0925

  • 10

    0.89585

  • 100

    0.69673

  • 500

    0.590596

  • 1000

    0.481099

  • 2000

    0.452903

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™-T2
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 26W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 8µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 40V
Input Capacitance (Ciss) (Max) @ Vds 1071pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)