IPG20N04S412AATMA1

Infineon Technologies

型号:

IPG20N04S412AATMA1

封装:

PG-TDSON-8-10

批次:

-

数据手册:

-

描述:

MOSFET 2N-CH 40V 20A 8TDSON

购买数量:

库存 : 28559

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.4345

  • 10

    1.28535

  • 100

    1.002155

  • 500

    0.827849

  • 1000

    0.653562

  • 2000

    0.609995

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 41W
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount, Wettable Flank
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 15µA
Base Product Number IPG20N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 12.2mOhm @ 17A, 10V
Supplier Device Package PG-TDSON-8-10
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Drain to Source Voltage (Vdss) 40V
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A