IPG16N10S4L61AATMA1
Infineon Technologies
型号:
IPG16N10S4L61AATMA1
封装:
PG-TDSON-8-10
批次:
-
数据手册:
-
描述:
MOSFET 2N-CH 100V 16A 8TDSON
购买数量:
库存 : 9980
最小起订量: 1 最小递增量: 1
数量
单价
1
1.0165
10
0.912
100
0.71079
500
0.587195
1000
0.463581
2000
0.432678
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Logic Level Gate |
| Power - Max | 29W |
| Configuration | 2 N-Channel (Dual) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.1V @ 90µA |
| Base Product Number | IPG16N10 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 61mOhm @ 16A, 10V |
| Supplier Device Package | PG-TDSON-8-10 |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 845pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 16A |
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