IPG16N10S4-61

Infineon Technologies

型号:

IPG16N10S4-61

封装:

PG-TDSON-8-4

批次:

-

数据手册:

-

描述:

IPG16N10 - 75V-100V N-CHANNEL AU

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™
Package Bulk
Technology MOSFET (Metal Oxide)
FET Feature -
Power - Max 29W (Tc)
Configuration 2 N-Channel (Dual)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 9µA
Base Product Number IPG16N
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 61mOhm @ 16A, 10V
Supplier Device Package PG-TDSON-8-4
Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V
Drain to Source Voltage (Vdss) 100V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)