Infineon Technologies
型号:
IPD135N08N3GATMA1
封装:
PG-TO252-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 80V 45A TO252-3
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.102
10
0.988
100
0.77045
500
0.636424
1000
0.502446
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Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 33µA |
Base Product Number | IPD135 |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 13.5mOhm @ 45A, 10V |
Power Dissipation (Max) | 79W (Tc) |
Supplier Device Package | PG-TO252-3 |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Drain to Source Voltage (Vdss) | 80 V |
Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |