首页 / 单 FET,MOSFET / IPD130N10NF2SATMA1

IPD130N10NF2SATMA1

Infineon Technologies

型号:

IPD130N10NF2SATMA1

封装:

PG-TO252-3

批次:

-

数据手册:

-

描述:

MOSFET

购买数量:

库存 : 请查询

请发送RFQ,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 30µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 13mOhm @ 30A, 10V
Power Dissipation (Max) 3W (Ta), 71W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 52A (Tc)