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IPD040N08NF2SATMA1

Infineon Technologies

型号:

IPD040N08NF2SATMA1

封装:

PG-TO252-3

批次:

-

数据手册:

-

描述:

MOSFET

购买数量:

库存 : 3717

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.862

  • 10

    1.54565

  • 100

    1.230535

  • 500

    1.041257

  • 1000

    0.88349

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series StrongIRFET™ 2
Package Cut Tape (CT)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 85µA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 4mOhm @ 70A, 10V
Power Dissipation (Max) 3W (Ta), 150W (Tc)
Supplier Device Package PG-TO252-3
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 129A (Tc)