IPD028N06NF2SATMA1
Infineon Technologies
型号:
IPD028N06NF2SATMA1
封装:
PG-TO252-3
批次:
-
数据手册:
-
描述:
TRENCH 40<-<100V
购买数量:
库存 : 1980
最小起订量: 1 最小递增量: 1
数量
单价
1
1.4535
10
1.20365
100
0.95798
500
0.810578
1000
0.687772
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | StrongIRFET™2 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.3V @ 80µA |
| Base Product Number | IPD028 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.85mOhm @ 70A, 10V |
| Power Dissipation (Max) | 3W (Ta), 150W (Tc) |
| Supplier Device Package | PG-TO252-3 |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 139A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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