Infineon Technologies
型号:
IPC50N04S55R8ATMA1
封装:
PG-TDSON-8-33
批次:
-
数据手册:
-
描述:
MOSFET N-CH 40V 50A 8TDSON-33
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
0.912
10
0.74575
100
0.58026
500
0.491872
1000
0.400691
2000
0.377198
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| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.4V @ 13µA |
| Base Product Number | IPC50N |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 25A, 10V |
| Power Dissipation (Max) | 42W (Tc) |
| Supplier Device Package | PG-TDSON-8-33 |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |