IPB65R190CFDAATMA1
Infineon Technologies
型号:
IPB65R190CFDAATMA1
封装:
PG-TO263-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 17.5A D2PAK
购买数量:
库存 : 344
最小起订量: 1 最小递增量: 1
数量
单价
1
5.016
10
4.50395
100
3.689895
500
3.141099
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.5V @ 700µA |
| Base Product Number | IPB65R190 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 7.3A, 10V |
| Power Dissipation (Max) | 151W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1850 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A (Tc) |
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