IPB60R199CPATMA1

Infineon Technologies

型号:

IPB60R199CPATMA1

封装:

PG-TO263-3-2

批次:

-

数据手册:

-

描述:

MOSFET N-CH 600V 16A TO263-3

购买数量:

库存 : 1950

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    4.199

  • 10

    3.7734

  • 100

    3.0913

  • 500

    2.631576

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolMOS™ CP
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 660µA
Base Product Number IPB60R199
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V
Power Dissipation (Max) 139W (Tc)
Supplier Device Package PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1520 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)