IPB60R099C6ATMA1
Infineon Technologies
型号:
IPB60R099C6ATMA1
封装:
PG-TO263-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 600V 37.9A D2PAK
购买数量:
库存 : 1735
最小起订量: 1 最小递增量: 1
数量
单价
1
6.5075
10
5.8805
100
4.86856
500
4.239489
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ C6 |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 1.21mA |
| Base Product Number | IPB60R099 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 99mOhm @ 18.1A, 10V |
| Power Dissipation (Max) | 278W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 37.9A (Tc) |
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