IPB50N10S3L16ATMA2
Infineon Technologies
型号:
IPB50N10S3L16ATMA2
封装:
PG-TO263-3-2
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 70A TO263-3
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS®-T |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 60µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 15.7mOhm @ 50A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Supplier Device Package | PG-TO263-3-2 |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4180 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
