Infineon Technologies
型号:
IPB45N04S4L-08
封装:
PG-TO263-3-2
批次:
-
数据手册:
-
描述:
N-CHANNEL POWER MOSFET
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
693
0.4085
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Mfr | Infineon Technologies |
Series | OptiMOS™T2 |
Package | Bulk |
FET Type | N-Channel |
Vgs (Max) | +20V, -16V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 17µA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 45A, 10V |
Power Dissipation (Max) | 45W (Tc) |
Supplier Device Package | PG-TO263-3-2 |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Drain to Source Voltage (Vdss) | 40 V |
Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |