IPB35N10S3L26ATMA1
Infineon Technologies
型号:
IPB35N10S3L26ATMA1
封装:
PG-TO263-3
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 35A D2PAK
购买数量:
库存 : 1591
最小起订量: 1 最小递增量: 1
数量
单价
1
1.9665
10
1.7632
100
1.417495
500
1.164643
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 39µA |
| Base Product Number | IPB35N10 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 26.3mOhm @ 35A, 10V |
| Power Dissipation (Max) | 71W (Tc) |
| Supplier Device Package | PG-TO263-3 |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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