IPB100N04S2L-03ATMA2

Infineon Technologies

型号:

品牌:

封装:

PG-TO263-3-2

批次:

数据手册:

描述:

N-CHANNEL POWER MOSFET

购买数量:

库存 : 17740

最小起订量: 1 最小递增量: 1

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参数信息

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Mfr	Infineon Technologies
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	3.3mOhm @ 80A, 10V
Power Dissipation (Max)	300W (Tc)
Supplier Device Package	PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)