IPB039N10N3GE8197ATMA1
Infineon Technologies
型号:
IPB039N10N3GE8197ATMA1
封装:
PG-TO263-7-3
批次:
-
数据手册:
-
描述:
N-CHANNEL POWER MOSFET
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Package | Bulk |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.9mOhm @ 100A, 10V |
| Power Dissipation (Max) | 214W (Tc) |
| Supplier Device Package | PG-TO263-7-3 |
| Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
2000+日均询价数量
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