IPB025N10N3GE8187ATMA1
Infineon Technologies
型号:
IPB025N10N3GE8187ATMA1
封装:
PG-TO263-7
批次:
-
数据手册:
-
描述:
MOSFET N-CH 100V 180A TO263-7
购买数量:
库存 : 请查询
请发送RFQ，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | OptiMOS™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 275µA |
| Base Product Number | IPB025 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | PG-TO263-7 |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14800 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
2000+日均询价数量
30,000,000标准产品数量
2800+全球品牌
15,000 ㎡库存仓库
快速链接
