IPAN65R650CEXKSA1
Infineon Technologies
型号:
IPAN65R650CEXKSA1
封装:
PG-TO220-FP
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 10.1A TO220
购买数量:
库存 : 497
最小起订量: 1 最小递增量: 1
数量
单价
1
1.3015
10
1.1628
100
0.906775
500
0.749094
1000
0.591384
2000
0.551969
5000
0.524362
10000
0.50465
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Base Product Number | IPAN65 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| Power Dissipation (Max) | 28W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
2000+日均询价数量
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15,000 ㎡库存仓库
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