IPAN60R600P7SXKSA1
Infineon Technologies
型号:
IPAN60R600P7SXKSA1
封装:
PG-TO220 Full Pack
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 6A TO220
购买数量:
库存 : 400
最小起订量: 1 最小递增量: 1
数量
单价
1
1.1115
10
0.90915
100
0.707275
500
0.599469
1000
0.488338
2000
0.459714
5000
0.437817
10000
0.41761
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolMOS™ P7 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Base Product Number | IPAN60 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1.7A, 10V |
| Power Dissipation (Max) | 21W (Tc) |
| Supplier Device Package | PG-TO220 Full Pack |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
2000+日均询价数量
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