IPAN60R360PFD7SXKSA1

Infineon Technologies

型号:

品牌:

封装:

PG-TO220-FP

批次:

数据手册:

描述:

MOSFET N-CH 650V 10A TO220

购买数量:

库存 : 460

最小起订量: 1 最小递增量: 1

数量

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参数信息

用户指南

Mfr	Infineon Technologies
Series	CoolMOS™PFD7
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 140µA
Base Product Number	IPAN60
Operating Temperature	-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	360mOhm @ 2.9A, 10V
Power Dissipation (Max)	23W (Tc)
Supplier Device Package	PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs	12.7 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	534 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)