Infineon Technologies
型号:
IPA65R280E6XKSA1
封装:
PG-TO220-FP
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 13.8A TO220-FP
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
2.774
10
2.4947
100
2.043735
500
1.739792
1000
1.467284
2000
1.393926
5000
1.341524
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| Mfr | Infineon Technologies |
| Series | CoolMOS™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Not For New Designs |
| Vgs(th) (Max) @ Id | 3.5V @ 440µA |
| Base Product Number | IPA65R280 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 4.4A, 10V |
| Power Dissipation (Max) | 32W (Tc) |
| Supplier Device Package | PG-TO220-FP |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |