Infineon Technologies
型号:
IPA65R1K5CEXKSA1
封装:
PG-TO220-FP
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 5.2A TO220
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.0545
10
0.94335
100
0.7353
500
0.607449
1000
0.47956
2000
0.447592
5000
0.42521
10000
0.409222
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 3.5V @ 130µA |
Base Product Number | IPA65R1 |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
Power Dissipation (Max) | 30W (Tc) |
Supplier Device Package | PG-TO220-FP |
Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |