Infineon Technologies
型号:
IPA65R1K0CEXKSA1
封装:
PG-TO220-FP
批次:
-
数据手册:
-
描述:
MOSFET N-CH 650V 7.2A TO220
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
1.159
10
1.0336
100
0.805695
500
0.665589
1000
0.525474
2000
0.490438
5000
0.465918
10000
0.4484
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Tube |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Base Product Number | IPA65R1 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
Power Dissipation (Max) | 68W (Tc) |
Supplier Device Package | PG-TO220-FP |
Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |