IPA60R125P6

Infineon Technologies

型号:

IPA60R125P6

封装:

PG-TO220-3-111

批次:

-

数据手册:

-

描述:

POWER FIELD-EFFECT TRANSISTOR

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 960µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 125mOhm @ 11.6A, 10V
Power Dissipation (Max) 34W (Tc)
Supplier Device Package PG-TO220-3-111
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)