IMZA65R107M1HXKSA1
Infineon Technologies
型号:
IMZA65R107M1HXKSA1
封装:
PG-TO247-3-41
批次:
-
数据手册:
-
描述:
MOSFET 650V NCH SIC TRENCH
购买数量:
库存 : 276
最小起订量: 1 最小递增量: 1
数量
单价
1
11.3525
10
10.25145
100
8.4873
500
7.390639
1000
6.437
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolSIC™ M1 |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +23V, -5V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 3mA |
| Base Product Number | IMZA65 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 142mOhm @ 8.9A, 18V |
| Power Dissipation (Max) | 75W (Tc) |
| Supplier Device Package | PG-TO247-3-41 |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 496 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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