IMZA120R020M1HXKSA1

Infineon Technologies

型号:

IMZA120R020M1HXKSA1

品牌:

封装:

PG-TO247-4-8

批次:

数据手册:

描述:

SIC DISCRETE

购买数量:

库存 : 208

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+20V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-4
Product Status	Active
Vgs(th) (Max) @ Id	5.2V @ 17.6mA
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	26.9mOhm @ 41A, 18V
Power Dissipation (Max)	375W (Tc)
Supplier Device Package	PG-TO247-4-8
Gate Charge (Qg) (Max) @ Vgs	83 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	3460 nF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	98A (Tc)