IMYH200R050M1HXKSA1
Infineon Technologies
型号:
IMYH200R050M1HXKSA1
封装:
PG-TO247-4-U04
批次:
-
数据手册:
-
描述:
SIC DISCRETE
购买数量:
库存 : 128
最小起订量: 1 最小递增量: 1
数量
单价
1
49.7135
10
44.2947
100
38.87913
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -7V |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.5V @ 12.1mA |
| Base Product Number | IMYH200 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20A, 18V |
| Power Dissipation (Max) | 348W (Tc) |
| Supplier Device Package | PG-TO247-4-U04 |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 2000 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
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