IMW65R057M1HXKSA1
Infineon Technologies
型号:
IMW65R057M1HXKSA1
封装:
PG-TO247-3-41
批次:
-
数据手册:
-
描述:
SILICON CARBIDE MOSFET, PG-TO247
购买数量:
库存 : 182
最小起订量: 1 最小递增量: 1
数量
单价
1
12.616
10
11.1112
100
9.60944
500
8.708555
1000
7.987838
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | +20V, -2V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 5mA |
| Base Product Number | IMW65R |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 16.7A, 18V |
| Power Dissipation (Max) | 133W (Tc) |
| Supplier Device Package | PG-TO247-3-41 |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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