IMW120R060M1HXKSA1

Infineon Technologies

型号:

IMW120R060M1HXKSA1

品牌:

封装:

PG-TO247-3-41

批次:

数据手册:

描述:

SICFET N-CH 1.2KV 36A TO247-3

购买数量:

库存 : 955

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+23V, -7V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 5.6mA
Base Product Number	IMW120
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	78mOhm @ 13A, 18V
Power Dissipation (Max)	150W (Tc)
Supplier Device Package	PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 18 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)