IMW120R045M1XKSA1

Infineon Technologies

型号:

IMW120R045M1XKSA1

品牌:

封装:

PG-TO247-3-41

批次:

数据手册:

描述:

SICFET N-CH 1.2KV 52A TO247-3

购买数量:

库存 : 140

最小起订量: 1 最小递增量: 1

数量

单价

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参数信息

用户指南

Mfr	Infineon Technologies
Series	CoolSiC™
Package	Tube
FET Type	N-Channel
Vgs (Max)	+20V, -10V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Not For New Designs
Vgs(th) (Max) @ Id	5.7V @ 10mA
Base Product Number	IMW120
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
Power Dissipation (Max)	228W (Tc)
Supplier Device Package	PG-TO247-3-41
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 15 V
Drain to Source Voltage (Vdss)	1200 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)	15V
Current - Continuous Drain (Id) @ 25°C	52A (Tc)