IMBG65R072M1HXTMA1

Infineon Technologies

型号:

IMBG65R072M1HXTMA1

品牌:

封装:

PG-TO263-7-12

批次:

数据手册:

描述:

SILICON CARBIDE MOSFET PG-TO263-

购买数量:

库存 : 845

最小起订量: 1 最小递增量: 1

数量

单价

请发送询价，我们将立即回复。

参数信息

用户指南

Mfr	Infineon Technologies
Series	CoolSIC™ M1
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+23V, -5V
Technology	SiCFET (Silicon Carbide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 4mA
Base Product Number	IMBG65R
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	94mOhm @ 13.3A, 18V
Power Dissipation (Max)	140W (Tc)
Supplier Device Package	PG-TO263-7-12
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 18 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	744 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)