IMBG120R030M1HXTMA1
Infineon Technologies
型号:
IMBG120R030M1HXTMA1
封装:
PG-TO263-7-12
批次:
-
数据手册:
-
描述:
SICFET N-CH 1.2KV 56A TO263
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolSiC™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | +18V, -15V |
| Technology | SiCFET (Silicon Carbide) |
| FET Feature | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.7V @ 11.5mA |
| Base Product Number | IMBG120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 25A, 18V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | PG-TO263-7-12 |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
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