首页 / 单 FET,MOSFET / IGLD60R190D1SAUMA1

IGLD60R190D1SAUMA1

Infineon Technologies

型号:

IGLD60R190D1SAUMA1

封装:

PG-LSON-8-1

批次:

-

数据手册:

-

描述:

GAN HV PG-LSON-8

购买数量:

库存 : 请查询

请发送RFQ,我们将立即回复。

Certif02 Certif07 Certif03

产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series CoolGaN™
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) -10V
Technology GaNFET (Gallium Nitride)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-LDFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 1.6V @ 960µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 62.5W (Tc)
Supplier Device Package PG-LSON-8-1
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 157 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 10A (Tc)