IGLD60R190D1AUMA3
Infineon Technologies
库存 : 2905
最小起订量: 1 最小递增量: 1
数量
单价
1
7.144
10
6.12085
100
5.100645
500
4.50053
1000
4.050477
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Series | CoolGaN™ |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | -10V |
| Technology | GaNFET (Gallium Nitride) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-LDFN Exposed Pad |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 1.6V @ 960µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Supplier Device Package | PG-LSON-8-1 |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
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