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IDW10G65C5XKSA1

Infineon Technologies

型号:

IDW10G65C5XKSA1

封装:

PG-TO247-3

批次:

-

数据手册:

-

描述:

DIODE SIL CARB 650V 10A TO247-3

购买数量:

库存 : 请查询

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series CoolSiC™+
Package Bulk
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Capacitance @ Vr, F 300pF @ 1V, 1MHz
Supplier Device Package PG-TO247-3
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A