Infineon Technologies
型号:
IDH20G65C6XKSA1
封装:
PG-TO220-2
批次:
-
数据手册:
-
描述:
DIODE SIL CARB 650V 41A TO220-2
购买数量:
最小起订量: 1 最小递增量: 1
数量
单价
1
7.5525
10
6.4733
100
5.394195
500
4.759595
1000
4.283636
2000
4.01393
请发送询价,我们将立即回复。

| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | IDH20G65 |
| Capacitance @ Vr, F | 970pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 67 µA @ 420 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 41A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 20 A |