IDH09G65C5XKSA2
Infineon Technologies
型号:
IDH09G65C5XKSA2
封装:
PG-TO220-2-1
批次:
-
数据手册:
-
描述:
DIODE SIL CARB 650V 9A TO220-2-1
购买数量:
库存 : 3290
最小起订量: 1 最小递增量: 1
数量
单价
128
2.2325
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | CoolSiC™+ |
| Package | Bulk |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 270pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2-1 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 160 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 9A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 9 A |
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