IDH04G65C6XKSA1
Infineon Technologies
型号:
IDH04G65C6XKSA1
封装:
PG-TO220-2
批次:
-
数据手册:
-
描述:
DIODE SIL CARB 650V 12A TO220-2
购买数量:
库存 : 13441
最小起订量: 1 最小递增量: 1
数量
单价
1
2.128
10
1.76415
100
1.404005
500
1.188032
1000
1.008026
2000
0.957628
5000
0.921624
10000
0.89111
请发送询价，我们将立即回复。
产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Base Product Number | IDH04G65 |
| Capacitance @ Vr, F | 205pF @ 1V, 1MHz |
| Supplier Device Package | PG-TO220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 14 µA @ 420 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 4 A |
2000+日均询价数量
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15,000 ㎡库存仓库
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