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IDH03G65C5XKSA2

Infineon Technologies

型号:

IDH03G65C5XKSA2

封装:

PG-TO220-2-1

批次:

-

数据手册:

-

描述:

DIODE SIL CARB 650V 3A TO220-2-1

购买数量:

库存 : 460

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    1.7575

  • 10

    1.4611

  • 100

    1.16318

  • 500

    0.984257

  • 1000

    0.835126

  • 2000

    0.793374

  • 5000

    0.763544

  • 10000

    0.738274

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Speed No Recovery Time > 500mA (Io)
Series CoolSiC™+
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Not For New Designs
Base Product Number IDH03G65
Capacitance @ Vr, F 100pF @ 1V, 1MHz
Supplier Device Package PG-TO220-2-1
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 3A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A