IDB18E120ATMA1
Infineon Technologies
型号:
IDB18E120ATMA1
封装:
PG-TO263-3-2
批次:
-
数据手册:
描述:
DIODE GEN PURP 1.2KV 31A TO263-3
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Infineon Technologies |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | Standard |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Obsolete |
| Base Product Number | IDB18 |
| Capacitance @ Vr, F | - |
| Supplier Device Package | PG-TO263-3-2 |
| Reverse Recovery Time (trr) | 195 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 1200 V |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 31A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - Forward (Vf) (Max) @ If | 2.15 V @ 18 A |
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