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IAUT200N08S5N023ATMA1

Infineon Technologies

型号:

IAUT200N08S5N023ATMA1

封装:

PG-HSOF-8-1

批次:

-

数据手册:

-

描述:

MOSFET N-CH 80V 200A 8HSOF

购买数量:

库存 : 3867

最小起订量: 1 最小递增量: 1

数量

单价

  • 1

    3.9235

  • 10

    3.29745

  • 100

    2.667315

  • 500

    2.370972

  • 1000

    2.03014

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产品信息

参数信息
用户指南
Mfr Infineon Technologies
Series OptiMOS™-5
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 130µA
Base Product Number IAUT200
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V
Power Dissipation (Max) 200W (Tc)
Supplier Device Package PG-HSOF-8-1
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 7670 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)