HT8KE6TB1
Rohm Semiconductor
型号:
HT8KE6TB1
封装:
8-HSMT (3.2x3)
批次:
-
数据手册:
-
描述:
100V 13A, DUAL NCH+NCH, HSMT8, P
购买数量:
库存 : 请查询
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产品信息
参数信息
用户指南
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Standard |
| Power - Max | 2W (Ta), 14W (Tc) |
| Configuration | 2 N-Channel |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 4.5A, 10V |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance (Ciss) (Max) @ Vds | 305pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 13A (Tc) |
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